Monolithic RF Class-E power amplifier on CMOS technologies

With the advancement of CMOS technology, the trend is to design transceivers using this technology with the aim of achieving full integration and reduced system cost. The power amplifier (PA) being one of the most important blocks of the wireless communication system is no exception. The aim of this work is to provide the study that allow the design of a singleended RF CMOS Class-E power amplifier for IEEE 802.11b / g applications. The technology that will be used to project the amplifier is UMC 0,18um CMOS. The main goal is to obtain a full integrated circuit with high efficiency to 2.4 GHz and output power exceeding 17 dBm. To design the various projects are used the common-source and cascode topology with and without driver stage. The drive projected is a class-F power amplifier tuned to the first and third harmonics.